BFU790F Datasheet. Specs and Replacement

Type Designator: BFU790F  📄📄 

SMD Transistor Code: D8*

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.234 W

Maximum Collector-Base Voltage |Vcb|: 10 V

Maximum Collector-Emitter Voltage |Vce|: 2.8 V

Maximum Emitter-Base Voltage |Veb|: 1 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 25000 MHz

Forward Current Transfer Ratio (hFE), MIN: 235

Noise Figure, dB: -

Package: SOT343F

 BFU790F Substitution

- BJT ⓘ Cross-Reference Search

 

BFU790F datasheet

 ..1. Size:99K  nxp

 bfu790f.pdf pdf_icon

BFU790F

BFU790F NPN wideband silicon germanium RF transistor Rev. 1 22 April 2011 Product data sheet 1. Product profile 1.1 General description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic ... See More ⇒

Detailed specifications: BFU610F, BFU630F, BFU660F, BFU690F, BFU710F, BFU725F, BFU730F, BFU760F, BC327, BUJ100, BUJ100LR, BUJ103A, BUJ103AD, BUJ103AX, BUJ105A, BUJ105AB, BUJ105AD

Keywords - BFU790F pdf specs

 BFU790F cross reference

 BFU790F equivalent finder

 BFU790F pdf lookup

 BFU790F substitution

 BFU790F replacement