PBHV8115Z Datasheet, Equivalent, Cross Reference Search
Type Designator: PBHV8115Z
SMD Transistor Code: V8115Z
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.7 W
Maximum Collector-Base Voltage |Vcb|: 400 V
Maximum Collector-Emitter Voltage |Vce|: 150 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 30 MHz
Collector Capacitance (Cc): 5.7 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT223
PBHV8115Z Transistor Equivalent Substitute - Cross-Reference Search
PBHV8115Z Datasheet (PDF)
pbhv8115z.pdf
PBHV8115Z150 V, 1 A NPN high-voltage low VCEsat (BISS) transistorRev. 02 9 December 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a mediumpower SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9115Z.1.2 Features High voltage Low collector-emitter
pbhv8115z.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbhv8115tlh.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
pbhv8115x.pdf
PBHV8115X150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor9 December 2013 Product data sheet1. General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89(SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9115X.2. Features and benefits High voltage Low collector-emitter s
pbhv8115t.pdf
PBHV8115T150 V, 1 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 4 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.PNP complement: PBHV9115T.1.2 Features High voltage Low collector-emitter satu
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
History: 2SB258 | MMBT2222A | MMBT2222AWT1 | 2N925
History: 2SB258 | MMBT2222A | MMBT2222AWT1 | 2N925
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