PBSS4620PA Datasheet. Specs and Replacement

Type Designator: PBSS4620PA  📄📄 

SMD Transistor Code: A6

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.5 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 50 MHz

Collector Capacitance (Cc): 95 pF

Forward Current Transfer Ratio (hFE), MIN: 280

Noise Figure, dB: -

Package: SOT1061

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PBSS4620PA datasheet

 ..1. Size:167K  philips

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PBSS4620PA

PBSS4620PA 20 V, 6 A NPN low VCEsat (BISS) transistor Rev. 01 18 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5620PA. 1.2 Features and benefits ... See More ⇒

 ..2. Size:284K  nxp

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PBSS4620PA

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 8.1. Size:167K  philips

pbss4612pa.pdf pdf_icon

PBSS4620PA

PBSS4612PA 12 V, 6 A NPN low VCEsat (BISS) transistor Rev. 01 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5612PA. 1.2 Features and benefits ... See More ⇒

 8.2. Size:167K  philips

pbss4630pa.pdf pdf_icon

PBSS4620PA

PBSS4630PA 30 V, 6 A NPN low VCEsat (BISS) transistor Rev. 01 6 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. PNP complement PBSS5630PA. 1.2 Features and benefits ... See More ⇒

Detailed specifications: PBSS4440D, PBSS4480X, PBSS4520X, PBSS4540X, PBSS4540Z, PBSS4560PA, PBSS4580PA, PBSS4612PA, A940, PBSS4630PA, PBSS5120T, PBSS5130T, PBSS5140T, PBSS5140U, PBSS5140V, PBSS5160DS, PBSS5160T

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