2N1166 Datasheet and Replacement

   Type Designator: 2N1166
   Material of Transistor: Ge
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 106 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 75 V
   Maximum Emitter-Base Voltage |Veb|: 50 V
   Maximum Collector Current |Ic max|: 25 A
   Max. Operating Junction Temperature (Tj): 100 °C
   Transition Frequency (ft): 0.1 MHz
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO3
      - BJT Cross-Reference Search