PDTA115EE Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

PDTA115EE Datasheet. Specs and Replacement

Type Designator: PDTA115EE 📄📄

SMD Transistor Code: 5E

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 100 kOhm

Built in Bias Resistor R2 = 100 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT416

PDTA115EE Substitution

- BJT ⓘ Cross-Reference Search

PDTA115EE datasheet

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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

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DISCRETE SEMICONDUCTORS DATA SHEET PDTA115E series PNP resistor-equipped transistors; R1 = 100 k , R2 = 100 k Product data sheet 2004 Jul 30 Supersedes data of 2004 May 05 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; PDTA115E series R1 = 100 k , R2 = 100 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI... See More ⇒

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