All Transistors. PDTA115EM Datasheet

 

PDTA115EM Datasheet and Replacement


   Type Designator: PDTA115EM
   SMD Transistor Code: F6
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 100 kOhm
   Built in Bias Resistor R2 = 100 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT883
 

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PDTA115EM Datasheet (PDF)

 ..1. Size:417K  nxp
pdta115ee pdta115eef pdta115ek pdta115em pdta115es pdta115et pdta115eu.pdf pdf_icon

PDTA115EM

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 0.1. Size:954K  nxp
pdta115emb.pdf pdf_icon

PDTA115EM

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 6.1. Size:183K  philips
pdta115e series.pdf pdf_icon

PDTA115EM

DISCRETE SEMICONDUCTORS DATA SHEETPDTA115E seriesPNP resistor-equipped transistors; R1 = 100 k, R2 = 100 kProduct data sheet 2004 Jul 30Supersedes data of 2004 May 05NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA115E seriesR1 = 100 k, R2 = 100 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

 6.2. Size:139K  nxp
pdta115eef pdta115ek pdta115es.pdf pdf_icon

PDTA115EM

DISCRETE SEMICONDUCTORS DATA SHEETPDTA115E seriesPNP resistor-equipped transistors; R1 = 100 k, R2 = 100 kProduct data sheet 2004 Jul 30Supersedes data of 2004 May 05NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA115E seriesR1 = 100 k, R2 = 100 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: 2SC1825 | TP5401 | KSD5005 | KC856W | MJE5741 | NB211YJ | STTIP32C

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