PDTA115TE Datasheet. Specs and Replacement
Type Designator: PDTA115TE 📄📄
SMD Transistor Code: 12
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 100000 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT416
PDTA115TE Substitution
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PDTA115TE datasheet
PDTA115T series PNP resistor-equipped transistors; R1 = 100 k , R2 = open Rev. 05 2 September 2009 Product data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistors. Table 1. Product overview Type number Package NPN complement NXP JEITA PDTA115TE SOT416 SC-75 PDTC115TE PDTA115TK SOT346 SC-59 PDTC115TK PDTA115TM SOT883 SC-101 PDTC115TM PDTA115TS[1]... See More ⇒
PDTA115T series PNP resistor-equipped transistors; R1 = 100 k , R2 = open Rev. 05 2 September 2009 Product data sheet 1. Product profile 1.1 General description PNP resistor-equipped transistors. Table 1. Product overview Type number Package NPN complement NXP JEITA PDTA115TE SOT416 SC-75 PDTC115TE PDTA115TK SOT346 SC-59 PDTC115TK PDTA115TM SOT883 SC-101 PDTC115TM PDTA115TS[1]... See More ⇒
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒
Detailed specifications: PDTA114YE, PDTA114YM, PDTA114YT, PDTA114YU, PDTA115EE, PDTA115EM, PDTA115ET, PDTA115EU, A1015, PDTA115TM, PDTA115TT, PDTA115TU, PDTA123EE, PDTA123EM, PDTA123ET, PDTA123EU, PDTA123JE
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