All Transistors. PDTA123EE Datasheet

 

PDTA123EE Datasheet and Replacement


   Type Designator: PDTA123EE
   SMD Transistor Code: 5C
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 2.2 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT416
 

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PDTA123EE Datasheet (PDF)

 ..1. Size:416K  nxp
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PDTA123EE

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 0.1. Size:139K  nxp
 pdta123eef pdta123ek pdta123es.pdf pdf_icon

PDTA123EE

DISCRETE SEMICONDUCTORS DATA SHEETPDTA123E seriesPNP resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 02Supersedes data of 2004 Apr 07NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

 6.1. Size:56K  motorola
 pdta123et 3.pdf pdf_icon

PDTA123EE

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTA123ETPNP resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 May 18Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA123ETFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design3ndbook, 4 columns

 6.2. Size:183K  philips
 pdta123e series.pdf pdf_icon

PDTA123EE

DISCRETE SEMICONDUCTORS DATA SHEETPDTA123E seriesPNP resistor-equipped transistors; R1 = 2.2 k, R2 = 2.2 kProduct data sheet 2004 Aug 02Supersedes data of 2004 Apr 07NXP Semiconductors Product data sheetPNP resistor-equipped transistors; PDTA123E seriesR1 = 2.2 k, R2 = 2.2 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNI

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