PDTA144WM Datasheet. Specs and Replacement
Type Designator: PDTA144WM 📄📄
SMD Transistor Code: F8
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT883
PDTA144WM Substitution
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PDTA144WM datasheet
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA144WU PNP resistor-equipped transistor Product specification 1999 May 25 Supersedes data of 1998 May 19 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA144WU FEATURES PINNING Built-in bias resistors R1 and R2 (typ. 47 k and 22 k PIN DESCRIPTION respectively) 1 base/input ... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA144WU PNP resistor-equipped transistor Product specification 1999 May 25 Supersedes data of 1998 May 19 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA144WU FEATURES PINNING Built-in bias resistors R1 and R2 (typ. 47 k and 22 k PIN DESCRIPTION respectively) 1 base/input ... See More ⇒
Detailed specifications: PDTA144TM, PDTA144TT, PDTA144TU, PDTA144VE, PDTA144VM, PDTA144VT, PDTA144VU, PDTA144WE, BC639, PDTA144WT, PDTA144WU, PDTB113ET, PDTB113ZT, PDTB123ET, PDTB123TT, PDTB123YT, PDTC114EE
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