PDTC115ET Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

PDTC115ET Datasheet. Specs and Replacement

Type Designator: PDTC115ET 📄📄

SMD Transistor Code: *44_p44_t44_W44

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 100 kOhm

Built in Bias Resistor R2 = 100 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT23

PDTC115ET Substitution

- BJT ⓘ Cross-Reference Search

PDTC115ET datasheet

6.1. Size:182K philips

pdtc115e series.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET PDTC115E series NPN resistor-equipped transistors; R1 = 100 k , R2 = 100 k Product data sheet 2004 Aug 06 Supersedes data of 2004 Apr 06 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC115E series R1 = 100 k , R2 = 100 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI... See More ⇒

6.2. Size:138K nxp

pdtc115eef pdtc115ek pdtc115es.pdf pdf_icon

7.1. Size:70K philips

pdtc115tk pdtc115ts.pdf pdf_icon

PDTC115T series NPN resistor-equipped transistors; R1 = 100 k , R2 = open Rev. 04 17 February 2005 Product data sheet 1. Product profile 1.1 General description NPN resistor-equipped transistors. Table 1 Product overview Type number Package PNP complement Philips JEITA PDTC115TE SOT416 SC-75 PDTA115TE PDTC115TK SOT346 SC-59A PDTA115TK PDTC115TM SOT883 SC-101 PDTA115TM [1] PD... See More ⇒

7.2. Size:71K philips

pdtc115t ser.pdf pdf_icon