PDTC123EM Datasheet PDF and Replacements, Transistor Equivalent Finder, Cross Reference

PDTC123EM Datasheet. Specs and Replacement

Type Designator: PDTC123EM 📄📄

SMD Transistor Code: G1

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 2.2 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 2.5 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT883

PDTC123EM Substitution

- BJT ⓘ Cross-Reference Search

PDTC123EM datasheet

6.1. Size:55K motorola

pdtc123et 3.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123ET NPN resistor-equipped transistor 1999 May 21 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC123ET FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k each) Simplification of circuit design Reduces number of co... See More ⇒

6.2. Size:182K philips

pdtc123e series.pdf pdf_icon

DISCRETE SEMICONDUCTORS DATA SHEET PDTC123E series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = 2.2 k Product data sheet 2004 Aug 06 Supersedes data of 2004 Mar 18 NXP Semiconductors Product data sheet NPN resistor-equipped transistors; PDTC123E series R1 = 2.2 k , R2 = 2.2 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI... See More ⇒

6.3. Size:55K philips

pdtc123et 3.pdf pdf_icon