All Transistors. PDTC123JT Datasheet

 

PDTC123JT Datasheet and Replacement


   Type Designator: PDTC123JT
   SMD Transistor Code: *25_p26_t26_W26
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.047
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT23
 

 PDTC123JT Substitution

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PDTC123JT Datasheet (PDF)

 ..1. Size:56K  motorola
 pdtc123jt 3.pdf pdf_icon

PDTC123JT

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123JTNPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JTFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 krespectively) Simplification of circuit design

 ..2. Size:56K  philips
 pdtc123jt 3.pdf pdf_icon

PDTC123JT

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC123JTNPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JTFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 krespectively) Simplification of circuit design

 6.1. Size:54K  motorola
 pdtc123jef 1.pdf pdf_icon

PDTC123JT

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC123JEFNPN resistor-equipped transistor1999 May 27Preliminary specificationPhilips Semiconductors Preliminary specificationNPN resistor-equipped transistor PDTC123JEFFEATURES Built-in bias resistors R1 and R2(typ. 2.2 k and 47 krespectively)3handbook, halfpage3 Simplification of circuit designR11 Red

 6.2. Size:55K  motorola
 pdtc123je 3.pdf pdf_icon

PDTC123JT

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC123JENPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 Aug 03Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC123JEFEATURES Built-in bias resistors R1 and R2 (typ. 2.2 and 47 krespectively) Simplification of circuit designhandbook, halfpage33

SHOW MORE

Datasheet: PDTC115TT , PDTC115TU , PDTC123EE , PDTC123EM , PDTC123ET , PDTC123EU , PDTC123JE , PDTC123JM , 13007 , PDTC123JU , PDTC123TE , PDTC123TM , PDTC123TT , PDTC123TU , PDTC123YE , PDTC123YM , PDTC123YT .

History: AM83135-030 | NPS2712 | MMUN2116LT2 | KSB772 | BFV92 | 2SD1990 | PDTA144TS

Keywords - PDTC123JT transistor datasheet

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