All Transistors. PDTC124EM Datasheet

 

PDTC124EM Datasheet, Equivalent, Cross Reference Search


   Type Designator: PDTC124EM
   SMD Transistor Code: DX
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 22 kOhm
   Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT883

 PDTC124EM Transistor Equivalent Substitute - Cross-Reference Search

   

PDTC124EM Datasheet (PDF)

 6.1. Size:56K  motorola
pdtc124et 5.pdf

PDTC124EM
PDTC124EM

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC124ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ETFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design3

 6.2. Size:58K  motorola
pdtc124es 2.pdf

PDTC124EM
PDTC124EM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC124ESNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ESFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification o

 6.3. Size:57K  motorola
pdtc124ek 3.pdf

PDTC124EM
PDTC124EM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC124EKNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Sep 08File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EKFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3 Simplificatio

 6.4. Size:58K  motorola
pdtc124eu 3.pdf

PDTC124EM
PDTC124EM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC124EUNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EUFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design

 6.5. Size:57K  motorola
pdtc124ee 2.pdf

PDTC124EM
PDTC124EM

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EEFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification of circuit design

 6.6. Size:56K  philips
pdtc124et 5.pdf

PDTC124EM
PDTC124EM

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC124ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ETFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design3

 6.7. Size:58K  philips
pdtc124es 2.pdf

PDTC124EM
PDTC124EM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC124ESNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ESFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification o

 6.8. Size:57K  philips
pdtc124ek 3.pdf

PDTC124EM
PDTC124EM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC124EKNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Sep 08File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EKFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3 Simplificatio

 6.9. Size:58K  philips
pdtc124eu 3.pdf

PDTC124EM
PDTC124EM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D102PDTC124EUNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EUFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design

 6.10. Size:57K  philips
pdtc124ee 2.pdf

PDTC124EM
PDTC124EM

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC124EENPN resistor-equipped transistor1998 Jul 31Product specificationSupersedes data of 1997 Jul 11File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124EEFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification of circuit design

 6.11. Size:174K  philips
pdtc124e series.pdf

PDTC124EM
PDTC124EM

DISCRETE SEMICONDUCTORS DATA SHEETPDTC124E seriesNPN resistor-equipped transistors; R1 = 22 k, R2 = 22 kProduct data sheet 2004 Aug 17Supersedes data of 2003 Apr 14NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC124E seriesR1 = 22 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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