PDTC124ET Datasheet. Specs and Replacement
Type Designator: PDTC124ET 📄📄
SMD Transistor Code: p17_t17_W17
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 60
Package: SOT23
PDTC124ET Substitution
- BJT ⓘ Cross-Reference Search
PDTC124ET datasheet
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC124ET NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124ET FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) 3 handbook, 4 columns Simplification of circuit design 3... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PDTC124ET NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 May 08 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124ET FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) 3 handbook, 4 columns Simplification of circuit design 3... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTC124ES NPN resistor-equipped transistor 1998 May 08 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124ES FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) Simplification o... See More ⇒
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D114 PDTC124EK NPN resistor-equipped transistor 1998 May 08 Product specification Supersedes data of 1997 Sep 08 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC124EK FEATURES Built-in bias resistors R1 and R2 (typ. 22 k each) 3 Simplificatio... See More ⇒
Detailed specifications: PDTC123TT, PDTC123TU, PDTC123YE, PDTC123YM, PDTC123YT, PDTC123YU, PDTC124EE, PDTC124EM, 13009, PDTC124EU, PDTC124TE, PDTC124TM, PDTC124TT, PDTC124TU, PDTC124XE, PDTC124XM, PDTC124XT
Keywords - PDTC124ET pdf specs
PDTC124ET cross reference
PDTC124ET equivalent finder
PDTC124ET pdf lookup
PDTC124ET substitution
PDTC124ET replacement
🌐 : EN ES РУ
LIST
Last Update
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P
Popular searches
mpsa56 transistor | transistor 2222a | 8050 transistor | bc238 | 2sb772 | 2n2222a-1726 datasheet | bc516 | 2n3391 equivalent