All Transistors. PDTC124TM Datasheet

 

PDTC124TM Datasheet and Replacement


   Type Designator: PDTC124TM
   SMD Transistor Code: DY
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 22 kOhm
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT883
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PDTC124TM Datasheet (PDF)

 6.1. Size:174K  philips
 pdtc124t series.pdf pdf_icon

PDTC124TM

DISCRETE SEMICONDUCTORS DATA SHEETPDTC124T seriesNPN resistor-equipped transistors; R1 = 22 k, R2 = openProduct data sheet 2004 Aug 13Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC124T seriesR1 = 22 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT S

 6.2. Size:134K  nxp
 pdtc124tef pdtc124tk pdtc124ts.pdf pdf_icon

PDTC124TM

DISCRETE SEMICONDUCTORS DATA SHEETPDTC124T seriesNPN resistor-equipped transistors; R1 = 22 k, R2 = openProduct data sheet 2004 Aug 13Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC124T seriesR1 = 22 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT S

 7.1. Size:56K  motorola
 pdtc124et 5.pdf pdf_icon

PDTC124TM

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC124ETNPN resistor-equipped transistor1999 Apr 16Product specificationSupersedes data of 1998 May 08Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ETFEATURES Built-in bias resistors R1 and R2(typ. 22 k each)3handbook, 4 columns Simplification of circuit design3

 7.2. Size:58K  motorola
 pdtc124es 2.pdf pdf_icon

PDTC124TM

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D186PDTC124ESNPN resistor-equipped transistor1998 May 08Product specificationSupersedes data of 1997 Jul 03File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC124ESFEATURES Built-in bias resistors R1 and R2(typ. 22 k each) Simplification o

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Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: TI413 | ZXTP2012Z | 3DD13007_Z8 | D60T5050 | BU2520D | BUV18 | KRA741U

Keywords - PDTC124TM transistor datasheet

 PDTC124TM cross reference
 PDTC124TM equivalent finder
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