PDTC143TU Datasheet, Equivalent, Cross Reference Search

   Type Designator: PDTC143TU
   SMD Transistor Code: *52_p52_t52_W52
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT323

PDTC143TU Transistor Equivalent Substitute - Cross-Reference Search

PDTC143TU Datasheet (PDF)

6.1. Size:51K motorola
pdtc143tt 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETook, halfpageM3D088PDTC143TTNPN resistor-equipped transistor1999 May 21Product specificationSupersedes data of 1998 May 29Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143TTFEATURES PINNING Built-in bias resistor R1 (typ. 4.7 k)PIN DESCRIPTION Simplification of circuit design1 base/input

6.2. Size:174K philips
pdtc143t series.pdf

DISCRETE SEMICONDUCTORS DATA SHEETPDTC143T seriesNPN resistor-equipped transistors; R1 = 4.7 k, R2 = openProduct data sheet 2004 Aug 06Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC143T seriesR1 = 4.7 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT

6.3. Size:51K philips
pdtc143tt 2.pdf