PDTC143XU Datasheet, Equivalent, Cross Reference Search

   Type Designator: PDTC143XU
   SMD Transistor Code: -53_*53_p53_t53_W53
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.47
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 2.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT323

PDTC143XU Transistor Equivalent Substitute - Cross-Reference Search

PDTC143XU Datasheet (PDF)

6.1. Size:56K motorola
pdtc143xt 1.pdf

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PDTC143XTNPN resistor-equipped transistor1999 Apr 20Product specificationPhilips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143XTFEATURES Built-in bias resistors R1 and R2(typ. 4.7 k and 10 k3handbook, 4 columnsrespectively)3 Simplification of circuit designR11

6.2. Size:55K motorola
pdtc143xe 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC143XENPN resistor-equipped transistorProduct specification 1999 May 21Supersedes data of 1998 May 29Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC143XEFEATURES Built-in bias resistors R1 and R2 (typ. 4.7 k and 10 krespectively) Simplification of circuit designhandbook, halfpage

6.3. Size:139K philips
pdtc143x ser.pdf

PDTC143X seriesNPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 kRev. 10 16 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family.Table 1. Product overviewType number Package PNP complementNXP JEITA JEDECPDTC143XE SOT416 SC-75 - PDTA143XEPDTC143XEF SOT490 SC-89 - PDTA143XEFPDTC143XK SOT346 SC-5

6.4. Size:56K philips
pdtc143xt 1.pdf