2N5652 Datasheet and Replacement
Type Designator: 2N5652
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Base Voltage |Vcb|: 20
V
Maximum Collector-Emitter Voltage |Vce|: 15
V
Maximum Emitter-Base Voltage |Veb|: 3
V
Maximum Collector Current |Ic max|: 0.03
A
Max. Operating Junction Temperature (Tj): 175
°C
Transition Frequency (ft): 2000
MHz
Collector Capacitance (Cc): 0.7
pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package:
TO72
- BJT Cross-Reference Search
2N5652 Datasheet (PDF)
9.1. Size:176K motorola
2n5655-57 2n5655 2n5656 2n5657.pdf 

Order this documentMOTOROLAby 2N5655/DSEMICONDUCTOR TECHNICAL DATA2N56552N5656Plastic NPN Silicon2N5657High-Voltage Power Transistor. . . designed for use in lineoperated equipment such as audio output amplifiers;lowcurrent, highvoltage converters; and AC line relays. 0.5 AMPEREPOWER TRANSISTORS Excellent DC Current Gain hFE = 30250 @ IC = 100 mAdcNP
9.2. Size:497K st
2n5657.pdf 

2N5657SILICON NPN TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5657 is a silicon epitaxial-base NPNtransistor in Jedec SOT-32 plastic package. It isintended for use output amplifiers, low current,high voltage converters and AC line relays.123SOT-32INTERNAL SCHEMATIC DIAGRAMABSOLUTE MAXIMUM RATINGSSymbol Parameter Value Un
9.4. Size:119K onsemi
2n5655g.pdf 

2N5655G, 2N5657GPlastic NPN SiliconHigh-Voltage PowerTransistorsThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current GainNPN SILICON High Current-Gain - Bandwidth Product250-350 VOLTS, 20 WATT
9.5. Size:80K onsemi
2n5655 2n5657.pdf 

2N5655, 2N5657Plastic NPN SiliconHigh-Voltage PowerTransistorThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current Gain -NPN SILICONhFE = 30-250 @ IC = 100 mAdc250-350 VOLTS, 20 WATTS Current
9.6. Size:80K onsemi
2n5657g.pdf 

2N5655, 2N5657Plastic NPN SiliconHigh-Voltage PowerTransistorThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current Gain -NPN SILICONhFE = 30-250 @ IC = 100 mAdc250-350 VOLTS, 20 WATTS Current
9.7. Size:175K onsemi
2n5655g 2n5657g.pdf 

2N5655G, 2N5657GPlastic NPN SiliconHigh-Voltage PowerTransistorsThese devices are designed for use in line-operated equipment suchas audio output amplifiers; low-current, high-voltage converters; andhttp://onsemi.comAC line relays.0.5 AMPEREFeaturesPOWER TRANSISTORS Excellent DC Current GainNPN SILICON High Current-Gain - Bandwidth Product250-350 VOLTS, 20 WATT
9.8. Size:121K jmnic
2n5655 2n5656 2n5657.pdf 

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5655 2N5656 2N5657 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 Bas
9.10. Size:53K inchange semiconductor
2n5657.pdf 

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5657 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) DC Current Gain- : hFE= 30-250@IC= 0.1A Low Saturation Voltage APPLICATIONS Designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC
9.11. Size:117K inchange semiconductor
2n5655 2n5656 2n5657.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5655 2N5656 2N5657 DESCRIPTION With TO-126 package High breakdown voltage APPLICATIONS For use in line-operated equipment such as audio output amplifiers; low-current ,high-voltage converters; and AC line relays PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting bas
9.12. Size:190K inchange semiconductor
2n5656.pdf 

isc Silicon NPN Power Transistors 2N5656DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)Low Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in line-operated equipment such as audiooutput amplifiers; low-current, high-voltage converters; and
9.13. Size:195K inchange semiconductor
2n5655.pdf 

isc Silicon NPN Power Transistors 2N5655DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 250V(Min)CEO(SUS)DC Current Gain-: h = 30-250@I = 0.1AFE CLow Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in line-operated equipment such as audiooutput amplifiers; low-current, high-
Datasheet: 2N5642
, 2N5643
, 2N5644
, 2N5645
, 2N5646
, 2N565
, 2N5650
, 2N5651
, BD135
, 2N5655
, 2N5656
, 2N5657
, 2N5658
, 2N5659
, 2N566
, 2N5660
, 2N5661
.
History: D29E2
| BDS28A
| KTB2510
| 2N5928
| 2SA3802
| FMMT2904
| BCX37
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