PUMB30 Datasheet, Equivalent, Cross Reference Search
Type Designator: PUMB30
SMD Transistor Code: *B2
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 2.2 kOhm
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 3 pF
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SOT363
PUMB30 Transistor Equivalent Substitute - Cross-Reference Search
PUMB30 Datasheet (PDF)
pemb30 pumb30.pdf
PEMB30; PUMB30PNP/PNP double resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 02 2 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)plastic packagesTable 1. Product overviewType number Package NPN/PNP NPN/NPNcomplement complementNXP JEITAPEMB30 SOT666
pumb3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETdbook, halfpageMBD128PUMB3PNP resistor-equipped doubletransistor; R1 = 4.7 kProduct specification 2001 Sep 19Philips Semiconductors Product specificationPNP resistor-equipped double transistor; R1 = 4.7 k PUMB3FEATURES QUICK REFERENCE DATA Transistors with built-in bias resistor R1 (typ. 4.7 k)SYMBOL PARAMETER MAX. UNIT
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
