All Transistors. PUMB30 Datasheet

 

PUMB30 Datasheet and Replacement


   Type Designator: PUMB30
   SMD Transistor Code: *B2
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 2.2 kOhm
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT363
 

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PUMB30 Datasheet (PDF)

 ..1. Size:69K  philips
 pemb30 pumb30.pdf pdf_icon

PUMB30

PEMB30; PUMB30PNP/PNP double resistor-equipped transistors;R1 = 2.2 k, R2 = openRev. 02 2 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP/PNP double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD)plastic packagesTable 1. Product overviewType number Package NPN/PNP NPN/NPNcomplement complementNXP JEITAPEMB30 SOT666

 9.1. Size:52K  philips
 pumb3.pdf pdf_icon

PUMB30

DISCRETE SEMICONDUCTORSDATA SHEETdbook, halfpageMBD128PUMB3PNP resistor-equipped doubletransistor; R1 = 4.7 kProduct specification 2001 Sep 19Philips Semiconductors Product specificationPNP resistor-equipped double transistor; R1 = 4.7 k PUMB3FEATURES QUICK REFERENCE DATA Transistors with built-in bias resistor R1 (typ. 4.7 k)SYMBOL PARAMETER MAX. UNIT

Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .

History: GSH9032E | 2SB1268 | 2SB1227 | 2SA1319R | BC224 | GT309B | GSH9012F

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