PUMH19 Datasheet, Equivalent, Cross Reference Search
Type Designator: PUMH19
SMD Transistor Code: H6*
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 22 kOhm
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Collector Capacitance (Cc): 2.5 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT363
PUMH19 Transistor Equivalent Substitute - Cross-Reference Search
PUMH19 Datasheet (PDF)
pemh19 pumh19.pdf
PEMH19; PUMH19NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = openRev. 03 15 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package NPN/PNP PNP/PNP complement complementNXP JEITAPEMH19 SOT666 - PEMD19 PEMB19PUMH19 SOT363 SC-88 PUMD19 PUMB191.2 Feature
pumh10 1.pdf
DISCRETE SEMICONDUCTORSDATA SHEETgeMBD128PUMH10NPN resistor-equipped transistorsProduct specification 2000 Aug 01Philips Semiconductors Product specificationNPN resistor-equipped transistors PUMH10FEATURES Transistors with built-in bias resistors R1 and R2(typ. 2.2 and 47 k)6 5 4 No mutual interference between the transistors handbook, halfpage Reduces n
pemh10 pumh10.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMH10; PUMH10NPN/NPN resistor-equipped transistors; R1 = 2.2 k, R2 = 47 kProduct data sheet 2003 Oct 20Supersedes data of 2001 Oct 22NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH10; PUMH10R1 = 2.2 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX.
pemh1 pumh1.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMH1; PUMH1NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 22 kProduct data sheet 2003 Oct 08Supersedes data of 2001 Oct 22NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH1; PUMH1R1 = 22 k, R2 = 22 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT
pumh11 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageMBD128PUMH11NPN resistor-equipped doubletransistor1999 Apr 13Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped double transistor PUMH11FEATURES Transistors with built-in bias resistors R1 and R2(typ. 10 k each) No mutual interference between t
pemh11 pumh11.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMH11; PUMH11NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 kProduct data sheet 2003 Oct 20Supersedes data of 2001 Oct 22NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH11; PUMH11R1 = 10 k, R2 = 10 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. U
pumh1 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETndbook, halfpageMBD128PUMH1NPN resistor-equipped doubletransistorProduct specification 1999 May 20Supersedes data of 1998 Aug 06Philips Semiconductors Product specificationNPN resistor-equipped double transistor PUMH1FEATURES Transistors with built-inbias resistors R1 and R2 (typ. 22 k each)6 5 4andbook, halfpage No mutu
pemh13 pumh13.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPEMH13; PUMH13NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 47 kProduct data sheet 2004 Apr 14Supersedes data of 2003 Nov 07 NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH13; PUMH13R1 = 4.7 k, R2 = 47 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX
pemh15 pumh15.pdf
PEMH15; PUMH15NPN/NPN resistor-equipped transistors;R1 = 4.7 k, R2 = 4.7 kRev. 5 16 December 2011 Product data sheet1. Product profile1.1 General descriptionNPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package NPN/PNP PNP/PNP Package complement complement configurationNXP
pemh16 pumh16.pdf
PEMH16; PUMH16NPN/NPN resistor-equipped transistors; R1 = 22 k, R2 = 47 kRev. 04 15 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package NPN/PNP PNP/PNP complement complementNXP JEITAPEMH16 SOT666 - PEMD16 PEMB16PUMH16 SOT363 SC-88 PUMD16 PUMB161.2 Featu
pemh18 pumh18.pdf
PEMH18; PUMH18NPN/NPN resistor-equipped transistors;R1 = 4.7 k, R2 = 10 kRev. 4 19 December 2011 Product data sheet1. Product profile1.1 General descriptionNPN/NPN double Resistor-Equipped Transistors (RET) in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number Package NPN/PNP PNP/PNP Package complement complement configurationNXP J
pemh17 pumh17.pdf
PEMH17; PUMH17NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = 22 kRev. 03 15 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package NPN/PNP PNP/PNP complement complementNXP JEITAPEMH17 SOT666 - PEMD17 PEMB17PUMH17 SOT363 SC-88 PUMD17 PUMB171.2 Featu
pemh14 pumh14.pdf
PEMH14; PUMH14NPN/NPN resistor-equipped transistors; R1 = 47 k, R2 = openRev. 03 15 November 2009 Product data sheet1. Product profile1.1 General descriptionNPN/NPN Resistor-Equipped Transistors (RET).Table 1. Product overviewType number Package NPN/PNP PNP/PNP complement complementNXP JEITAPEMH14 SOT666 - PEMD14 PEMB14PUMH14 SOT363 SC-88 PUMD14 PUMB141.2 Feature
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
