PZTA14 Datasheet, Equivalent, Cross Reference Search
Type Designator: PZTA14
SMD Transistor Code: P1N
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 125 MHz
Forward Current Transfer Ratio (hFE), MIN: 20000
Noise Figure, dB: -
Package: SOT223
PZTA14 Transistor Equivalent Substitute - Cross-Reference Search
PZTA14 Datasheet (PDF)
pzta14 4.pdf
DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087PZTA14NPN Darlington transistor1999 Apr 14Product specificationSupersedes data of 1997 Sep 04Philips Semiconductors Product specificationNPN Darlington transistor PZTA14FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 30 V).1 base/input2, 4 collector/outputAPPLICATIONS
pzta14.pdf
DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageM3D087PZTA14NPN Darlington transistorProduct data sheet 1999 Apr 14Supersedes data of 1997 Sep 04 NXP Semiconductors Product data sheetNPN Darlington transistor PZTA14FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 30 V).1 base/input2, 4 collector/outputAPPLICATIONS3 emitte
pzta14.pdf
PZTA14NPN Silicon Darlington Transistor For general AF applications43 High collector current21 High current gain Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackagePZTA14 PZTA141=B 2=C 3=E 4=C - - SOT223Maximum RatingsParameter Symbol Value Unit30 VCollector-emitter voltage VCES30Collector-base
pzta14.pdf
PZTA14NPN Transistor Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-223Description The PZTA14 is darlington amplifier transistor designed for applications requiring extremely high current gain.MillimeterMillimeterREF. REF. Min. Max. Min. Max. A 6.70 7.30 B 13 TYP. A 1 4 C 2.90 3.10 J 2.30 REF. Date CodeD 0.02 0.10 1 6.30 6.70
pzta14.pdf
PZTA14 SOT-223 Transistor(NPN)1. BASE SOT-2232. COLLECTOR 1 3. EMITTER Features High current (max. 500 mA) Low voltage (max. 30 V). Pre-amplifiers requiring high input impedance. MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 VVEBO
pzta14.pdf
PZTA14Darlington NPN Silicon Planar Epitaxial TransistorCOLLECTOR42, 41. BASEP b Lead(Pb)-Free2.COLLECTOR13.EMITTERBASE24.COLLECTOR1 3SOT-2233EMITTERABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating Symbol Value UnitCollector-Emitter Voltage VCEO 30 VCollector-Base Voltage VCBOV30VEBOEmitter-Base Voltage10 VIC(DC)Collector Current (DC) 300mA2 W
pzta14t1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby PZTA14T1/DPZTA14T1NPN Small SignalMotorola Preferred DeviceDarlington TransistorThis NPN small signal darlington transistor is designed for use in switchingSOT223 PACKAGEapplications, such as print hammer, relay, solenoid and lamp drivers. TheMEDIUM POWERdevice is housed in the SOT-223 package, which is designe
pzta13.pdf
NPN Silicon Darlington Transistors PZTA 13PZTA 14 For general AF applications High collector current High current gain Complementary types: PZTA 63PZTA 64 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4PZTA 13 PZTA 13 Q62702-Z2033 B C E C SOT-223PZTA 14 PZTA 14 Q62702-Z2034Maximum RatingsParameter Symbol Values UnitCollector-emitter v
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
