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2N567 PDF Specs and Replacement


   Type Designator: 2N567
   Material of Transistor: Ge
   Polarity: PNP

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 30 V
   Maximum Collector-Emitter Voltage |Vce|: 25 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 85 °C

Electrical Characteristics


   Transition Frequency (ft): 0.5 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO5
 

 2N567 Substitution

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2N567 PDF detailed specifications

 0.1. Size:72K  njs
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2N567

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2N567

DATA SHEET 2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON HIGH POWER TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5679 Series types are complementary silicon high power transistors manufactured by the epitaxial planar process and designed for general-purpose amplifier and switching applications where high voltages are required. MAXIMUM RATIN... See More ⇒

 0.3. Size:317K  comset
2n5671-2n5672.pdf pdf_icon

2N567

NPN 2N5671 2N5672 HIGH CURRENT FAST SWITCHING APPLICATIONS HIGH CURRENT FAST SWITCHING APPLICATIONS The 2N5671 and 2N5672 are silicon multiepitaxial planer NPN transistors in Jedec TO-3. They are especially intended for high current, fast switching industrial applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N5671 90 VCEO Collector-Emitter Voltage V 2N5672 120 2N56... See More ⇒

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2N567

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Detailed specifications: 2N5663 , 2N5664 , 2N5664SM , 2N5665 , 2N5665SM , 2N5666 , 2N5666SM , 2N5667 , 2SD669A , 2N5671 , 2N5672 , 2N5675 , 2N5676 , 2N5677 , 2N5678 , 2N5679 , 2N568 .

History: 2N2801 | 2SD1490 | 2SA1016G | 2SC2239

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History: 2N2801 | 2SD1490 | 2SA1016G | 2SC2239

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