2STA2120 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2STA2120
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 250 V
Maximum Collector-Emitter Voltage |Vce|: 250 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 17 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 25 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: TO3P
2STA2120 Transistor Equivalent Substitute - Cross-Reference Search
2STA2120 Datasheet (PDF)
2sta2120.pdf
2STA2120High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -250 V Complementary to 2STC5948 Typical ft = 25 MHz Fully characterized at 125 oCApplication32 Audio power amplifier1TO-3PDescriptionThe device is a PNP transistor manufactured Figure 1. Internal schematic diagramusing new BiT-LA (Bipolar transistor fo
2sta2121.pdf
2STA2121High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -250 V Complementary to 2STC5949 Typical ft = 25 MHz Fully characterized at 125 oCApplication Audio power amplifierTO-264DescriptionThe device is a PNP transistor manufactured Figure 1. Internal schematic diagramusing new BiT-LA (Bipolar transistor for linear amplifier) t
2sta2510.pdf
2STA2510High power PNP epitaxial planar bipolar transistorFeatures High breakdown voltage VCEO = -100 V Complementary to 2STC2510 Typical ft = 20 MHz Fully characterized at 125 oC32Application1TO-3P Audio power amplifierDescriptionFigure 1. Internal schematic diagramThe device is a PNP transistor manufactured using new BiT-LA (Bipolar transistor fo
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2SC3478
