BUL1203EFP Datasheet and Replacement

BUL1203EFPHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTINGAPPLICATIONS 32 ELECTRONIC BALLASTS FOR1FLUORESCENT LIGHTING (277 V HALFBRIDGE AND 120 V PUSH-PULLTO-220FPTOP

BUL1203EHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDAPPLICATIONS ELECTRONIC BALLASTS FORFLUORESCENT LIGHTING (277 V HALF 32BRIDGE AND 120 V PUSH-PULL1TOPOLOGIES)TO-220DESCRIPTION The BUL1203E is a new device manufactured

isc Silicon NPN Power Transistor BUL1203EDESCRIPTIONHigh VoltageHigh Speed SwitchingMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSElectronic ballasts for fluorescent lightingABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 1200 VCBOV Collector-Emitter Voltage V = 0 1200 VCES

BUL128FPHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED32APPLICATIONS: 1 ELECTRONIC BALLASTS FORFLUORESCENT LIGHTINGTO-220FPDESCRIPTION The device is manufactured using

BUL128D-BHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORn STMicroelectronics PREFERRED SALES Figure 1: PackageTYPEn NPN TRANSISTORn HIGH VOLTAGE CAPABILITYn LOW SPREAD OF DYNAMIC PARAMETERSn MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATIONn VERY HIGH SWITCHING SPEEDn INTEGRATED ANTIPARALLEL 3COLLECTOR- EMITTER DIODE21 TO-220APPLICATIONSn ELECTRONIC BALLAST FO

BUL129DHigh voltage fast-switchingNPN power transistorFeatures Integrated antiparallel collector-emitter diode High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed321ApplicationsTO-220 Electronic transformer for halogen lampDescriptionThe device is manufactured using

BUL128D-B HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED3 INTEGRATED ANTIPARALLEL2COLLECTOR-EMITTER DIODE1APPLICATIONS:TO-220 ELECTRONIC BALLASTS FORFLUORESCENT LIGHTING

BUL128HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED32APPLICATIONS: 1 ELECTRONIC BALLASTS FORFLUORESCENT LIGHTINGTO-220DESCRIPTION The device is manufactured using high

BUL128D(NPN) TO-220 TransistorTO-2201.BASE 2.COLLECTOR 3.EMITTER 3 21Features ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 700 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Vol

BUL123S NPN /SILICON NPN TRANSISTOR : Purpose: High frequency electronic lighting ballast applicationsconverters, inverters, switching regulators, etc. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 700 V CBO V 400 V

BUL128DR8 NPN /SILICON NPN TRANSISTOR : Purpose: Electronic ballasts for fluorescent lighting,flyback and forward single transistor low power converters. :N Features: NPN transistor,high voltage capability,low

BUL128DR7 NPN /SILICON NPN TRANSISTOR : Purpose: Electronic ballasts for fluorescent lighting,flyback and forward single transistor low power converters. :N Features: NPN transistor,high voltage capability,low

SUNROC BUL128D TRANSISTOR (NPN) TO-220 FEATURES ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER 1.BASE CONVERTERS 2.COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.EMITTER Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL128D DESCRIPTION With TO-220C package High voltage ,high speed Integrated antiparallel collector-emitter diode APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base

INCHANGE Semiconductorisc Silicon NPN Power Transistor BUL128DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Low Collector Saturation Voltage: V = 0.7V(Max) @ I = 0.5ACE(sat) CVery High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in lighting applications