BUL654 Specs and Replacement

Type Designator: BUL654

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 7

Noise Figure, dB: -

Package: TO220

 BUL654 Substitution

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BUL654 datasheet

 ..1. Size:54K  st

 bul654.pdf pdf_icon

BUL654

BUL654 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR PRELIMINARY DATA HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION LOW BASE-DRIVE REQUIREMENTS VERY HIGH SWITCHING SPEED FULLY CHARACTERIZED AT 125oC APPLICATIONS ELECTRONIC TRANSFORMER FOR 3 2 HALOGEN LAMPS 1 SWITCH MODE POWER SUPPLIES TO-220 DESCRIPTION The BUL654 is manufactured us... See More ⇒

 9.1. Size:14K  semelab

 bul65a.pdf pdf_icon

BUL654

BUL65A SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) HIGH SPEED NPN 6.78 (0.267) 5.21 (0.205) 0.84 (0.033) 5.46 (0.215) 0.94 (0.037) SILICON POWER TRANSISTOR 1.09 (0.043) 1.30 (0.051) Designed for use in 5.97 (0.235) 6.22 (0.245) electronic ballast applications 1 2 3 SEMEFAB DESIGNED AND... See More ⇒

 9.2. Size:14K  semelab

 bul65b.pdf pdf_icon

BUL654

BUL65B SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) HIGH SPEED NPN 6.78 (0.267) 5.21 (0.205) 0.84 (0.033) 5.46 (0.215) 0.94 (0.037) SILICON POWER TRANSISTOR 1.09 (0.043) 1.30 (0.051) Designed for use in 5.97 (0.235) 6.22 (0.245) electronic ballast applications 1 2 3 SEMEFAB DESIGNED AND... See More ⇒

Detailed specifications: BUL128DB, BUL128FP, BUL138, BUL310FP, BUL312FP, BUL39D, BUL49D, BUL59, BC337, BUL704, BUL705, BUL7216, BUL741, BUL742C, BUL85D, BUL89, BUL903ED

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