BUL903EDFP Specs and Replacement
Type Designator: BUL903EDFP
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220FP
BUL903EDFP Substitution
- BJT ⓘ Cross-Reference Search
BUL903EDFP datasheet
BUL903EDFP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3 2 ARCING TEST SELF PROTECTED 1 FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR... See More ⇒
BUL903ED HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3 2 ARCING TEST SELF PROTECTED 1 APPLICATIONS TO-220 LAMP ELECTRONIC BALLAST ... See More ⇒
BUL903ED HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED 3 2 ARCING TEST SELF PROTECTED 1 APPLICATIONS TO-220 LAMP ELECTRONIC BALLAST F... See More ⇒
Detailed specifications: BUL704, BUL705, BUL7216, BUL741, BUL742C, BUL85D, BUL89, BUL903ED, BC557, BULB128, BULB39D, BULB49D, BULB7216, BULB742C, BULD118D, BULD39D-1, BULD741
Keywords - BUL903EDFP pdf specs
BUL903EDFP cross reference
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History: DTA113EM3T5G | GES3694 | GES3693
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