BUL903EDFP Datasheet, Equivalent, Cross Reference Search
Type Designator: BUL903EDFP
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 35 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220FP
BUL903EDFP Transistor Equivalent Substitute - Cross-Reference Search
BUL903EDFP Datasheet (PDF)
bul903edfp.pdf
BUL903EDFPHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR INTEGRATED ANTISATURATION ANDPROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOREMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED32 ARCING TEST SELF PROTECTED1 FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR
bul903ed.pdf
BUL903EDHIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR INTEGRATED ANTISATURATION ANDPROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOREMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED32 ARCING TEST SELF PROTECTED1APPLICATIONS TO-220 LAMP ELECTRONIC BALLAST
bul903.pdf
BUL903ED HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR INTEGRATED ANTISATURATION ANDPROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOREMITTER DIODE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEED32 ARCING TEST SELF PROTECTED1APPLICATIONSTO-220 LAMP ELECTRONIC BALLAST F
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
