BULD742C Specs and Replacement

Type Designator: BULD742C

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 45 W

Maximum Collector-Base Voltage |Vcb|: 1050 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: DPAK

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BULD742C datasheet

 ..1. Size:313K  st

buld742c.pdf pdf_icon

BULD742C

BULD742C High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed 3 1 Applications DPAK Electronic ballast for fluorescent lighting Switch mode power supplies Description The device is manufactured using high voltage Figure 1... See More ⇒

 8.1. Size:309K  st

buld741.pdf pdf_icon

BULD742C

BULD741 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed 3 3 2 1 Description 1 The device is manufactured using high voltage DPAK IPAK Multi-Epitaxial Planar technology for high TO-252 TO-251 switching speeds and high vol... See More ⇒

Detailed specifications: BULB128, BULB39D, BULB49D, BULB7216, BULB742C, BULD118D, BULD39D-1, BULD741, 2SD1047, BULK128DB, BUT30V, BUT70W, BUTW92, BUXD87, D44H11FP, D45H11FP, HD1530FX

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