ST13007D Datasheet, Equivalent, Cross Reference Search
Type Designator: ST13007D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 700 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 8 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 8
Noise Figure, dB: -
Package: TO220
ST13007D Transistor Equivalent Substitute - Cross-Reference Search
ST13007D Datasheet (PDF)
st13007d.pdf
ST13007DHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR IMPROVED SPECIFICATION:- LOWER LEAKAGE CURRENT- TIGHTER GAIN RANGE- DC CURRENT GAIN PRESELECTION- TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR32RELIABLE OPERATION1 VERY HIGH SWITCHING SPEED FULLY CHARACT
st13007dfp.pdf
ST13007DFPHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR IMPROVED SPECIFICATION:- LOWER LEAKAGE CURRENT- TIGHTER GAIN RANGE- DC CURRENT GAIN PRESELECTION- TIGHTER STORAGE TIME RANGE HIGH VOLTAGE CAPABILITY INTEGRATED FREE-WHEELING DIODE LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR32RELIABLE OPERATION1 VERY HIGH SWITCHING SPEED FULLY CHARA
st13007-.pdf
ST13007FP HIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY NPN TRANSISTOR LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FORRELIABLE OPERATION VERY HIGH SWITCHING SPEEDo FULLY CHARACTERIZED AT 125 C LARGE RBSOA32APPLICATIONS1 ELECTRONIC BALLASTS FORFLUORESCENT LIGHTINGTO-220FP SWITCH MODE POWER SUPPLIESDESCRIPTION
st13007.pdf
ST13007High voltage fast-switching NPN power transistorFeatures DC current gain classificationTAB High voltage capability Low spread of dynamic parameters Very high switching speedApplications 321 Electronic ballast for fluorescent lightingTO-220 Switch mode power suppliesDescriptionFigure 1. Internal schematic diagramThe device is manufactured
st13007.pdf
ST 13007 NPN Silicon Transistor for high voltage, high-speed power switching application TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 700 VCollector Emitter Voltage VCEO 400 VEmitter Base Voltage VEBO 9 VCollector Current IC 8 AOTotal Power Dissipation (Ta = 25 C) Ptot 2 WOTotal Power Dissipation (
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
