All Transistors. STB13007DT4 Datasheet

 

STB13007DT4 Datasheet, Equivalent, Cross Reference Search


   Type Designator: STB13007DT4
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 80 W
   Maximum Collector-Base Voltage |Vcb|: 700 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 9 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: D2PAK

 STB13007DT4 Transistor Equivalent Substitute - Cross-Reference Search

   

STB13007DT4 Datasheet (PDF)

 ..1. Size:228K  st
stb13007dt4.pdf

STB13007DT4
STB13007DT4

STB13007DT4High voltage fast-switching NPN power transistorGeneral features Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability Integrated free-wheeling diode3 Low spread of dynamic parameters 1 Minimum lot-to-lot spread for reliable operationD2PAK Very high

 7.1. Size:210K  st
stb13005.pdf

STB13007DT4
STB13007DT4

STB13005High voltage fast-switchingNPN power transistorFeatures Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Through hole TO-262 (I2PAK) power package in tube (suffix -1)32Applications 1I2PAK Electronic ballast for fluorescent lighting Switch mode power suppliesDescriptionFigur

 8.1. Size:396K  st
stb130ns04zbt4.pdf

STB13007DT4
STB13007DT4

STP130NS04ZB - STB130NS04ZB-1STB130NS04ZB - STW130NS04ZBN-channel clamped - 7 m - 80A TO-220/I2/D2PAK/TO-247Fully protected mesh overlay MOSFETGeneral featuresType VDSS RDS(on) IDSTP130NS04ZB clamped

 8.2. Size:410K  st
stb130nh02l.pdf

STB13007DT4
STB13007DT4

STB130NH02LN-CHANNEL 24V - 0.0034 - 120A DPAKSTripFET III POWER MOSFET FOR DC-DC CONVERSIONTYPE VDSS RDS(on) IDSTB130NH02L 24 V

 8.3. Size:515K  st
stb130ns04zb-1.pdf

STB13007DT4
STB13007DT4

STB130NS04ZB-1Automotive-grade N-channel clamped, 7 m typ., 80 A fullyprotected Mesh overlay Power MOSFET in a I2PAK packageDatasheet - production dataFeaturesTABRDS(on) Type VDS IDmax.STB130NS04ZB-1 Clamped 9 m 80 A Designed for automotive applications and AEC-Q101 qualified321 100% avalanche tested Low capacitance and gate chargeI2PAK 1

 8.4. Size:397K  st
stp130ns04zb stb130ns04zb stw130ns04zb stb130ns04zb-1.pdf

STB13007DT4
STB13007DT4

STP130NS04ZB - STB130NS04ZB-1STB130NS04ZB - STW130NS04ZBN-channel clamped - 7 m - 80A TO-220/I2/D2PAK/TO-247Fully protected mesh overlay MOSFETGeneral featuresType VDSS RDS(on) IDSTP130NS04ZB clamped

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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