STB13007DT4 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

STB13007DT4 Specs and Replacement

Type Designator: STB13007DT4

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 400 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 8 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 8

Noise Figure, dB: -

Package: D2PAK

STB13007DT4 Substitution

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STB13007DT4 datasheet

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stb13007dt4.pdf pdf_icon

STB13007DT4 High voltage fast-switching NPN power transistor General features Improved specification Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage capability Integrated free-wheeling diode 3 Low spread of dynamic parameters 1 Minimum lot-to-lot spread for reliable operation D2PAK Very high ... See More ⇒

7.1. Size:210K st

stb13005.pdf pdf_icon

STB13005 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Through hole TO-262 (I2PAK) power package in tube (suffix -1 ) 3 2 Applications 1 I2PAK Electronic ballast for fluorescent lighting Switch mode power supplies Description Figur... See More ⇒

8.1. Size:396K st

stb130ns04zbt4.pdf pdf_icon

STP130NS04ZB - STB130NS04ZB-1 STB130NS04ZB - STW130NS04ZB N-channel clamped - 7 m - 80A TO-220/I2/D2PAK/TO-247 Fully protected mesh overlay MOSFET General features Type VDSS RDS(on) ID STP130NS04ZB clamped ... See More ⇒

8.2. Size:410K st

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