All Transistors. 2N5687 Datasheet

 

2N5687 Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2N5687
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Transition Frequency (ft): 2 MHz
   Collector Capacitance (Cc): 15 pF
   Forward Current Transfer Ratio (hFE), MIN: 15
   Noise Figure, dB: -
   Package: TO128

 2N5687 Transistor Equivalent Substitute - Cross-Reference Search

   

2N5687 Datasheet (PDF)

 9.1. Size:270K  motorola
2n5684 2n5685 2n5686.pdf

2N5687
2N5687

Order this documentMOTOROLAby 2N5684/DSEMICONDUCTOR TECHNICAL DATAPNP2N5684High-Current ComplementaryNPNSilicon Power Transistors2N5685. . . designed for use in highpower amplifier and switching circuit applications. High Current Capability IC Continuous = 50 Amperes.*2N5686 DC Current Gain hFE = 1560 @ IC = 25 Adc Low CollectorEmitter Sa

 9.2. Size:123K  central
2n5679 2n5680 2n5681 2n5682.pdf

2N5687
2N5687

DATA SHEET2N5679 2N5680 PNP 2N5681 2N5682 NPN COMPLEMENTARY SILICON HIGH POWER TRANSISTORS JEDEC TO-39 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR 2N5679 Series types are complementary silicon high power transistors manufactured by the epitaxial planar process and designed for general-purpose amplifier and switching applications where high voltages are required. MAXIMUM RATIN

 9.3. Size:114K  onsemi
2n5684 2n5686.pdf

2N5687
2N5687

2N5684 (PNP), 2N5686 (NPN)High-CurrentComplementary SiliconPower TransistorsThese packages are designed for use in high-power amplifier andswitching circuit applications.http://onsemi.comFeatures50 AMPERE High Current Capability - IC Continuous = 50 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 AdcPOWER TRANSISTORS Low Collector-Emitte

 9.4. Size:114K  onsemi
2n5684g.pdf

2N5687
2N5687

2N5684 (PNP), 2N5686 (NPN)High-CurrentComplementary SiliconPower TransistorsThese packages are designed for use in high-power amplifier andswitching circuit applications.http://onsemi.comFeatures50 AMPERE High Current Capability - IC Continuous = 50 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 AdcPOWER TRANSISTORS Low Collector-Emitte

 9.5. Size:114K  onsemi
2n5686g.pdf

2N5687
2N5687

2N5684 (PNP), 2N5686 (NPN)High-CurrentComplementary SiliconPower TransistorsThese packages are designed for use in high-power amplifier andswitching circuit applications.http://onsemi.comFeatures50 AMPERE High Current Capability - IC Continuous = 50 AmperesCOMPLEMENTARY SILICON DC Current Gain - hFE = 15 - 60 @ IC = 25 AdcPOWER TRANSISTORS Low Collector-Emitte

 9.6. Size:185K  mospec
2n5683-86.pdf

2N5687
2N5687

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 9.7. Size:522K  semelab
2n5682x.pdf

2N5687
2N5687

 9.8. Size:10K  semelab
2n5681smd05.pdf

2N5687

2N5681SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 100V IC = 1A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab her

 9.9. Size:43K  bocasemi
2n5679 2n5680 2n5681 2n5682.pdf

2N5687
2N5687

IS/ISO 9002 IS / IECQC 700000Lic# QSC/L- 000019.2 IS / IECQC 750100Continental Device India LimitedAn IS/ISO 9002 and IECQ Certified ManufacturerPNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPNTO-39 TO-39Boca Semiconductor Corp. BSCThese Are High Voltage & High Current, General Purpose TransistorsABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL 2N5

 9.10. Size:187K  cdil
2n5679 2n5680 81 82.pdf

2N5687
2N5687

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5681 2N5680 2N5682 PNP NPNTO-39 TO-39These Are High Voltage & High Current, General Purpose TransistorsABSOLUTE MAXIMUM RATINGS.DESCRIPTION SYMBOL 2N5679 2N5680 UNITS2N5681 2N5682Collector -Emitter Voltage VCEO 100 120 VCollector -Base

 9.11. Size:164K  aeroflex
2n5679 2n5680.pdf

2N5687
2N5687

PNP Power Silicon Transistor2N5679 & 2N5680Features Available in JAN, JANTX and JANTXVper MIL-PRF-19500/582 TO-39 (TO-205AD) PackageMaximum Ratings (TA = 25C unless otherwise noted)Ratings Symbol 2N5679 2N5680 UnitsCollector - Emitter Voltage VCEO 100 120 VdcCollector - Base Voltage VCBO 100 120 VdcEmitter - Base Voltage VEBO 4.0 4.0 VdcCollector Current IC 1.0 1.0

Datasheet: 2N5680 , 2N5681 , 2N5681SM , 2N5682 , 2N5683 , 2N5684 , 2N5685 , 2N5686 , 4124 , 2N5688 , 2N5689 , 2N569 , 2N5690 , 2N5691 , 2N5692 , 2N5693 , 2N5694 .

 

 
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