BC817U Specs and Replacement

Type Designator: BC817U

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.33 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 45 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.5 A

Electrical Characteristics

Transition Frequency (ft): 170 MHz

Forward Current Transfer Ratio (hFE), MIN: 160

Noise Figure, dB: -

Package: SC74

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BC817U datasheet

 ..1. Size:523K  infineon

bc817u.pdf pdf_icon

BC817U

BC817U NPN Silicon AF Transistor Array For AF stages and driver applications 4 3 High current gain 5 2 6 1 Low collector-saturation voltage Two (galvanic) internal isolated transistors with good matching in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07178 Type Marking Pin Config... See More ⇒

 0.1. Size:524K  infineon

bc817upn.pdf pdf_icon

BC817U

BC817UPN NPN Silicon AF Transistor Array For AF stages and driver applications 4 3 High current gain 5 2 6 1 Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistors in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 C1 B2 E2 6 5 4 Tape loading orientation TR2 Marking on SC74 package TR1 ... See More ⇒

 9.1. Size:90K  motorola

bc817-16.pdf pdf_icon

BC817U

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC817 16LT1/D BC817-16LT1 General Purpose Transistors NPN Silicon BC817-25LT1 COLLECTOR 3 BC817-40LT1 2 BASE 1 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 45 V Collector Base Voltage VCBO 50 V CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Emitter Base Voltage VEBO... See More ⇒

 9.2. Size:52K  philips

bc817 3.pdf pdf_icon

BC817U

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Detailed specifications: TIP35CP, TR136, TR236, BC846PN, BC846U, BC846UPN, BC856U, BC807U, BC546, BC817SU, BC817UPN, SMBTA06UPN, BC847BL3, BCW61A, BC817K-40W, BC817K-25W, 2SC4370AP

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