BUL63B Specs and Replacement

Type Designator: BUL63B

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 500 V

Maximum Collector-Emitter Voltage |Vce|: 250 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 20 MHz

Collector Capacitance (Cc): 70 pF

Forward Current Transfer Ratio (hFE), MIN: 25

Noise Figure, dB: -

Package: TO251

 BUL63B Substitution

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BUL63B datasheet

 ..1. Size:14K  semelab

 bul63b.pdf pdf_icon

BUL63B

BUL63B SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) HIGH SPEED NPN 6.78 (0.267) 5.21 (0.205) 0.84 (0.033) 5.46 (0.215) 0.94 (0.037) SILICON POWER TRANSISTOR 1.09 (0.043) 1.30 (0.051) Designed for use in 5.97 (0.235) 6.22 (0.245) electronic ballast applications 1 2 3 SEMEFAB DESIGNED AND... See More ⇒

 9.1. Size:14K  semelab

 bul63a.pdf pdf_icon

BUL63B

BUL63A SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE 2.18 (0.086) 2.44 (0.096) 6.40 (0.252) HIGH SPEED NPN 6.78 (0.267) 5.21 (0.205) 0.84 (0.033) 5.46 (0.215) 0.94 (0.037) SILICON POWER TRANSISTOR 1.09 (0.043) 1.30 (0.051) Designed for use in 5.97 (0.235) 6.22 (0.245) electronic ballast applications 1 2 3 SEMEFAB DESIGNED AND... See More ⇒

Detailed specifications: BCM846S, BCM856S, SMBT3904PN, SMBT3904S, SMBT3904U, SMBT3904UPN, SMBT3906, SMBT3906U, 2222A, BUL63A, 2SA2154, 2SA2154CT, 2SA2154MFV, 2SA2195, 2SA2214, 2SA2215, 2SA562TM

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