All Transistors. HN1B04FE Datasheet

 

HN1B04FE Datasheet, Equivalent, Cross Reference Search


   Type Designator: HN1B04FE
   SMD Transistor Code: 1DY_1DG
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: ES6

 HN1B04FE Transistor Equivalent Substitute - Cross-Reference Search

   

HN1B04FE Datasheet (PDF)

 ..1. Size:313K  toshiba
hn1b04fe.pdf

HN1B04FE HN1B04FE

HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mmAudio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120~400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: High voltage and

 0.1. Size:339K  toshiba
hn1b04fe-y hn1b04fe-gr.pdf

HN1B04FE HN1B04FE

HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit: mmAudio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : VCEO = 50V, IC = 150mA (max) High hFE : hFE = 120 to 400 Excellent hFE linearity : hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2: High voltage

 7.1. Size:297K  toshiba
hn1b04f.pdf

HN1B04FE HN1B04FE

HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit: mmAudio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1: Excellent hFE linearity : hFE(2) = 25 (min) at VCE = -6V, IC = -400mA Q2: Excellent hFE linearity : hFE(2) = 25 (min) at VCE = 6V

 7.2. Size:390K  toshiba
hn1b04fu.pdf

HN1B04FE HN1B04FE

HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit: mmAudio Frequency General Purpose Amplifier Applications Q1: High voltage and high current : V = 50V, I = 150mA (max) CEO C High h : h = 120~400 FE FE Excellent h linearity FE: h (I = 0.1mA) / h (I = 2mA) = 0.95 (typ.) FE C FE CQ2:

Datasheet: HN1A01FE , HN1A01FU , HN1A02F , HN1A07F , HN1A26FS , HN1B01F , HN1B01FU , HN1B04F , 2SA1943 , HN1B04FU , HN1B26FS , HN1C01F , HN1C01FE , HN1C01FU , HN1C03F , HN1C03FU , HN1C05FE .

 

 
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