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HN1B04FE Specs and Replacement


   Type Designator: HN1B04FE
   SMD Transistor Code: 1DY_1DG
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: ES6
 

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HN1B04FE detailed specifications

 ..1. Size:313K  toshiba
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HN1B04FE

HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit mm Audio Frequency General Purpose Amplifier Applications Q1 High voltage and high current VCEO = 50V, IC = 150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2 High voltage and ... See More ⇒

 0.1. Size:339K  toshiba
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HN1B04FE

HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit mm Audio Frequency General Purpose Amplifier Applications Q1 High voltage and high current VCEO = 50V, IC = 150mA (max) High hFE hFE = 120 to 400 Excellent hFE linearity hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2 High voltage... See More ⇒

 7.1. Size:297K  toshiba
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HN1B04FE

HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1 Excellent hFE linearity hFE(2) = 25 (min) at VCE = -6V, IC = -400mA Q2 Excellent hFE linearity hFE(2) = 25 (min) at VCE = 6V... See More ⇒

 7.2. Size:390K  toshiba
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HN1B04FE

HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit mm Audio Frequency General Purpose Amplifier Applications Q1 High voltage and high current V = 50V, I = 150mA (max) CEO C High h h = 120 400 FE FE Excellent h linearity FE h (I = 0.1mA) / h (I = 2mA) = 0.95 (typ.) FE C FE C Q2 ... See More ⇒

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Detailed specifications: HN1A01FE , HN1A01FU , HN1A02F , HN1A07F , HN1A26FS , HN1B01F , HN1B01FU , HN1B04F , S8050 , HN1B04FU , HN1B26FS , HN1C01F , HN1C01FE , HN1C01FU , HN1C03F , HN1C03FU , HN1C05FE .

Keywords - HN1B04FE transistor specs

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