HN1B04FU Specs and Replacement

Type Designator: HN1B04FU

SMD Transistor Code: 1DY_1DG

Material of Transistor: Si

Polarity: NPN*PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Transition Frequency (ft): 120 MHz

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: US6

 HN1B04FU Substitution

- BJT ⓘ Cross-Reference Search

 

HN1B04FU datasheet

 ..1. Size:390K  toshiba

hn1b04fu.pdf pdf_icon

HN1B04FU

HN1B04FU TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FU Unit mm Audio Frequency General Purpose Amplifier Applications Q1 High voltage and high current V = 50V, I = 150mA (max) CEO C High h h = 120 400 FE FE Excellent h linearity FE h (I = 0.1mA) / h (I = 2mA) = 0.95 (typ.) FE C FE C Q2 ... See More ⇒

 7.1. Size:297K  toshiba

hn1b04f.pdf pdf_icon

HN1B04FU

HN1B04F TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) HN1B04F Unit mm Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications Switching application Q1 Excellent hFE linearity hFE(2) = 25 (min) at VCE = -6V, IC = -400mA Q2 Excellent hFE linearity hFE(2) = 25 (min) at VCE = 6V... See More ⇒

 7.2. Size:339K  toshiba

hn1b04fe-y hn1b04fe-gr.pdf pdf_icon

HN1B04FU

HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit mm Audio Frequency General Purpose Amplifier Applications Q1 High voltage and high current VCEO = 50V, IC = 150mA (max) High hFE hFE = 120 to 400 Excellent hFE linearity hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2 High voltage... See More ⇒

 7.3. Size:313K  toshiba

hn1b04fe.pdf pdf_icon

HN1B04FU

HN1B04FE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) Silicon PNP Epitaxial Type (PCT Process) HN1B04FE Unit mm Audio Frequency General Purpose Amplifier Applications Q1 High voltage and high current VCEO = 50V, IC = 150mA (max) High hFE hFE = 120 400 Excellent hFE linearity hFE (IC = 0.1mA) / hFE (IC = 2mA) = 0.95 (typ.) Q2 High voltage and ... See More ⇒

Detailed specifications: HN1A01FU, HN1A02F, HN1A07F, HN1A26FS, HN1B01F, HN1B01FU, HN1B04F, HN1B04FE, 2SA1943, HN1B26FS, HN1C01F, HN1C01FE, HN1C01FU, HN1C03F, HN1C03FU, HN1C05FE, HN1C07F

Keywords - HN1B04FU pdf specs

 HN1B04FU cross reference

 HN1B04FU equivalent finder

 HN1B04FU pdf lookup

 HN1B04FU substitution

 HN1B04FU replacement