2N5697 Datasheet and Replacement

   Type Designator: 2N5697
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 3.5 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 18 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 200 °C
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO3
     - BJT ⓘ Cross-Reference Search