RN1101MFV Specs and Replacement

Type Designator: RN1101MFV

SMD Transistor Code: XA

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT723 VESM

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RN1101MFV datasheet

 ..1. Size:1016K  toshiba

rn1101mfv rn1102mfv rn1103mfv rn1104mfv rn1105mfv rn1106mfv.pdf pdf_icon

RN1101MFV

RN1101MFV RN1106MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101MFV,RN1102MFV,RN1103MFV RN1104MFV,RN1105MFV,RN1106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit mm Ultra-small package, suited to very high density mounting 1.2 0.05 Incorporating a bias resistor into the transistor reduces the number of par... See More ⇒

 8.1. Size:147K  toshiba

rn1101f-1106f xa-b-c-d-e-f sot490.pdf pdf_icon

RN1101MFV

RN1101F RN1106F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101F,RN1102F,RN1103F RN1104F,RN1105F,RN1106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2101F RN2106F Equivalent ... See More ⇒

 8.2. Size:98K  toshiba

rn1101fs-1106fs l0-1-2-3-4-5 sot823.pdf pdf_icon

RN1101MFV

RN1101FS RN1106FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FS,RN1102FS,RN1103FS RN1104FS,RN1105FS,RN1106FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of e... See More ⇒

 8.3. Size:168K  toshiba

rn1101act rn1106act.pdf pdf_icon

RN1101MFV

RN1101ACT RN1106ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101ACT,RN1102ACT,RN1103ACT RN1104ACT,RN1105ACT,RN1106ACT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 0.5 0.03 Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor r... See More ⇒

Detailed specifications: HN4B06J, HN4C05JU, HN4C06J, HN4C08J, HN4C51J, RN1101ACT, RN1101CT, RN1101FS, 2SC2625, RN1101, RN1102ACT, RN1102CT, RN1102FS, RN1102MFV, RN1102, RN1103ACT, RN1103CT

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