RN1101 Specs and Replacement

Type Designator: RN1101

SMD Transistor Code: XA

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: SOT416 SC75 SSM

 RN1101 Substitution

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RN1101 datasheet

 ..1. Size:566K  toshiba

rn1101 rn1106.pdf pdf_icon

RN1101

RN1101 RN1106 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101, RN1102, RN1103, RN1104, RN1105, RN1106 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2101 RN2106 Equivale... See More ⇒

 0.1. Size:147K  toshiba

rn1101f-1106f xa-b-c-d-e-f sot490.pdf pdf_icon

RN1101

RN1101F RN1106F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101F,RN1102F,RN1103F RN1104F,RN1105F,RN1106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2101F RN2106F Equivalent ... See More ⇒

 0.2. Size:98K  toshiba

rn1101fs-1106fs l0-1-2-3-4-5 sot823.pdf pdf_icon

RN1101

RN1101FS RN1106FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FS,RN1102FS,RN1103FS RN1104FS,RN1105FS,RN1106FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of e... See More ⇒

 0.3. Size:168K  toshiba

rn1101act rn1106act.pdf pdf_icon

RN1101

RN1101ACT RN1106ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101ACT,RN1102ACT,RN1103ACT RN1104ACT,RN1105ACT,RN1106ACT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 0.5 0.03 Interface Circuit Applications Driver Circuit Applications Incorporating a bias resistor into a transistor r... See More ⇒

Detailed specifications: HN4C05JU, HN4C06J, HN4C08J, HN4C51J, RN1101ACT, RN1101CT, RN1101FS, RN1101MFV, SS8050, RN1102ACT, RN1102CT, RN1102FS, RN1102MFV, RN1102, RN1103ACT, RN1103CT, RN1103FS

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