2N5699 Specs and Replacement
Type Designator: 2N5699
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 10 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO129
2N5699 Substitution
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2N5699 datasheet
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Detailed specifications: 2N5691, 2N5692, 2N5693, 2N5694, 2N5695, 2N5696, 2N5697, 2N5698, BD139, 2N57, 2N570, 2N5700, 2N5701, 2N5702, 2N5703, 2N5704, 2N5705
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