All Transistors. RN1102FS Datasheet

 

RN1102FS Datasheet and Replacement


   Type Designator: RN1102FS
   SMD Transistor Code: L1
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.05 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 1.2 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: FSM
 

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RN1102FS Datasheet (PDF)

 ..1. Size:126K  toshiba
rn1101fs rn1102fs rn1103fs rn1104fs rn1105fs rn1106fs.pdf pdf_icon

RN1102FS

RN1101FS~RN1106FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FS,RN1102FS,RN1103FS RN1104FS,RN1105FS,RN1106FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of e

 8.1. Size:1016K  toshiba
rn1101mfv rn1102mfv rn1103mfv rn1104mfv rn1105mfv rn1106mfv.pdf pdf_icon

RN1102FS

RN1101MFVRN1106MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101MFV,RN1102MFV,RN1103MFV RN1104MFV,RN1105MFV,RN1106MFV Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Ultra-small package, suited to very high density mounting 1.2 0.05 Incorporating a bias resistor into the transistor reduces the number of par

 9.1. Size:147K  toshiba
rn1101f-1106f xa-b-c-d-e-f sot490.pdf pdf_icon

RN1102FS

RN1101FRN1106F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101F,RN1102F,RN1103F RN1104F,RN1105F,RN1106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2101F~RN2106F Equivalent

 9.2. Size:164K  toshiba
rn1107act rn1109act.pdf pdf_icon

RN1102FS

RN1107ACT ~ RN1109ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107ACT, RN1108ACT, RN1109ACT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications TOP View 0.60.05 Extra small package(CST3) is applicable for extra high density 0.50.03 fabrication. Incorporating a bias resis

Datasheet: HN4C51J , RN1101ACT , RN1101CT , RN1101FS , RN1101MFV , RN1101 , RN1102ACT , RN1102CT , TIP127 , RN1102MFV , RN1102 , RN1103ACT , RN1103CT , RN1103FS , RN1103MFV , RN1103 , RN1104ACT .

History: BLX74 | BC849CR | LBC848CLT1G | LBC848BDW1T1G | LBC848BWT1G | 2SC940 | J460

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