All Transistors. RN1108ACT Datasheet

 

RN1108ACT Datasheet and Replacement


   Type Designator: RN1108ACT
   SMD Transistor Code: C7
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 22 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.47
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.08 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Collector Capacitance (Cc): 0.7 pF
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT883 CST3
 

 RN1108ACT Substitution

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RN1108ACT Datasheet (PDF)

 8.1. Size:361K  toshiba
rn1107mfv rn1108mfv rn1109mfv.pdf pdf_icon

RN1108ACT

RN1107MFV~RN1109MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1107MFV,RN1108MFV,RN1109MFV Unit: mm1.2 0.05Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.80 0.05 Ultra-small package, suited to very high density mounting 11 Incorporating a bias resistor into the transistor reduc

 8.2. Size:129K  toshiba
rn1107fs rn1108fs rn1109fs.pdf pdf_icon

RN1108ACT

RN1107FS~RN1109FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107FS,RN1108FS,RN1109FS Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment

 9.1. Size:147K  toshiba
rn1101f-1106f xa-b-c-d-e-f sot490.pdf pdf_icon

RN1108ACT

RN1101FRN1106F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101F,RN1102F,RN1103F RN1104F,RN1105F,RN1106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2101F~RN2106F Equivalent

 9.2. Size:164K  toshiba
rn1107act rn1109act.pdf pdf_icon

RN1108ACT

RN1107ACT ~ RN1109ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107ACT, RN1108ACT, RN1109ACT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications TOP View 0.60.05 Extra small package(CST3) is applicable for extra high density 0.50.03 fabrication. Incorporating a bias resis

Datasheet: RN1106FS , RN1106MFV , RN1106 , RN1107ACT , RN1107CT , RN1107FS , RN1107MFV , RN1107 , B647 , RN1108CT , RN1108FS , RN1108MFV , RN1108 , RN1109ACT , RN1109CT , RN1109FS , RN1109MFV .

History: BC54PA | 2SC1026 | KSH13003 | ST34 | BD266A | BD746 | 2SC441

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