RN1108MFV Specs and Replacement

Type Designator: RN1108MFV

SMD Transistor Code: XI

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 22 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.47

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SOT723 VESM

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RN1108MFV datasheet

 ..1. Size:361K  toshiba

rn1107mfv rn1108mfv rn1109mfv.pdf pdf_icon

RN1108MFV

RN1107MFV RN1109MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1107MFV,RN1108MFV,RN1109MFV Unit mm 1.2 0.05 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.80 0.05 Ultra-small package, suited to very high density mounting 1 1 Incorporating a bias resistor into the transistor reduc... See More ⇒

 8.1. Size:129K  toshiba

rn1107fs rn1108fs rn1109fs.pdf pdf_icon

RN1108MFV

RN1107FS RN1109FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107FS,RN1108FS,RN1109FS Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment ... See More ⇒

 9.1. Size:147K  toshiba

rn1101f-1106f xa-b-c-d-e-f sot490.pdf pdf_icon

RN1108MFV

RN1101F RN1106F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1101F,RN1102F,RN1103F RN1104F,RN1105F,RN1106F Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2101F RN2106F Equivalent ... See More ⇒

 9.2. Size:164K  toshiba

rn1107act rn1109act.pdf pdf_icon

RN1108MFV

RN1107ACT RN1109ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107ACT, RN1108ACT, RN1109ACT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications TOP View 0.6 0.05 Extra small package(CST3) is applicable for extra high density 0.5 0.03 fabrication. Incorporating a bias resis... See More ⇒

Detailed specifications: RN1107ACT, RN1107CT, RN1107FS, RN1107MFV, RN1107, RN1108ACT, RN1108CT, RN1108FS, TIP32C, RN1108, RN1109ACT, RN1109CT, RN1109FS, RN1109MFV, RN1109, RN1110ACT, RN1110CT

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