RN1109ACT Datasheet, Equivalent, Cross Reference Search
Type Designator: RN1109ACT
SMD Transistor Code: C8
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Maximum Collector Power Dissipation (Pc): 0.1
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 15
V
Maximum Collector Current |Ic max|: 0.08
A
Max. Operating Junction Temperature (Tj): 150
°C
Collector Capacitance (Cc): 0.7
pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package: SOT883
CST3
RN1109ACT Transistor Equivalent Substitute - Cross-Reference Search
RN1109ACT Datasheet (PDF)
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Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
