RN1109MFV Specs and Replacement

Type Designator: RN1109MFV

SMD Transistor Code: XJ

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 47 kOhm

Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 2.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 15 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 70

Noise Figure, dB: -

Package: SOT723 VESM

 RN1109MFV Substitution

- BJT ⓘ Cross-Reference Search

 

RN1109MFV datasheet

 ..1. Size:361K  toshiba

 rn1107mfv rn1108mfv rn1109mfv.pdf pdf_icon

RN1109MFV

RN1107MFV RN1109MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1107MFV,RN1108MFV,RN1109MFV Unit mm 1.2 0.05 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.80 0.05 Ultra-small package, suited to very high density mounting 1 1 Incorporating a bias resistor into the transistor reduc... See More ⇒

 8.1. Size:164K  toshiba

 rn1107act rn1109act.pdf pdf_icon

RN1109MFV

RN1107ACT RN1109ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107ACT, RN1108ACT, RN1109ACT Switching, Inverter Circuit, Interface Circuit and Unit mm Driver Circuit Applications TOP View 0.6 0.05 Extra small package(CST3) is applicable for extra high density 0.5 0.03 fabrication. Incorporating a bias resis... See More ⇒

 8.2. Size:339K  toshiba

 rn1107 rn1109.pdf pdf_icon

RN1109MFV

RN1107 1109 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1107, RN1108, RN1109 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors. Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2107 to 2109 Equivalent Circuit and Bias Resistor V... See More ⇒

 8.3. Size:151K  toshiba

 rn1107ct rn1109ct.pdf pdf_icon

RN1109MFV

RN1107CT RN1109CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1107CT,RN1108CT,RN1109CT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 Interface Circuit Applications 0.5 0.03 Driver Circuit Applications Incorporating a bias resistor into a transistor reduces the number of parts, which e... See More ⇒

SHOW MORE

Detailed specifications: RN1108ACT, RN1108CT, RN1108FS, RN1108MFV, RN1108, RN1109ACT, RN1109CT, RN1109FS, B647, RN1109, RN1110ACT, RN1110CT, RN1110FS, RN1110MFV, RN1110, RN1111ACT, RN1111CT

Keywords - RN1109MFV pdf specs

 RN1109MFV cross reference

 RN1109MFV equivalent finder

 RN1109MFV pdf lookup

 RN1109MFV substitution

 RN1109MFV replacement