All Transistors. RN1111MFV Datasheet

 

RN1111MFV Datasheet, Equivalent, Cross Reference Search

Type Designator: RN1111MFV

SMD Transistor Code: XM

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT723_VESM

RN1111MFV Transistor Equivalent Substitute - Cross-Reference Search

 

RN1111MFV Datasheet (PDF)

1.1. rn1110mfv rn1111mfv.pdf Size:321K _toshiba

RN1111MFV
RN1111MFV

RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1110MFV,RN1111MFV Unit: mm 1.2 ± 0.05 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.80 ± 0.05 Ultra-small package, suited to very high density mounting 1 Incorporating a bias resistor into the transistor reduces the number of

4.1. rn1110act rn1111act.pdf Size:237K _update

RN1111MFV
RN1111MFV

RN1110ACT, RN1111ACT 東芝トランジスタ シリコンNPNエピタキシャル形 (PCT方式) (バイアス抵抗内蔵) RN1110ACT,RN1111ACT ○ スイッチング用 単位: mm ○ インバータ回路用 0.6±0.05 ○ インタフェース回路用 0.5±0.03 ○ ドライバ回路用 • 超小型パッケージ (CST3) のため超高密度実装に適しています。

4.2. rn1110f rn1111f sot490.pdf Size:105K _toshiba

RN1111MFV
RN1111MFV

RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110F, RN2111F Equivalent Circuit Maximum Ratings (Ta = 25°C) JE

4.3. rn1110f rn1111f 071101.pdf Size:281K _toshiba

RN1111MFV
RN1111MFV

RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit Unit: mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110F, RN2111F Equivalent Circuit Absolute Maximum Ratings (Ta = 2

4.4. rn1110 rn1111 sot416.pdf Size:106K _toshiba

RN1111MFV
RN1111MFV

RN1110,RN1111 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110,RN1111 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110~RN2111 Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC ?

4.5. rn1110ct rn1111ct 090413.pdf Size:154K _toshiba

RN1111MFV
RN1111MFV

RN1110CT, RN1111CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1110CT,RN1111CT Switching Applications Unit: mm Inverter Circuit Applications 0.6±0.05 Interface Circuit Applications 0.5±0.03 Driver Circuit Applications 3 • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the

4.6. rn1110ft rn1111ft .pdf Size:121K _toshiba

RN1111MFV
RN1111MFV

RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • High-density mount is possible because of devices housed in very thin TESM packages. • Incorporating a bias resistor into a transistor reduces parts count. Redu

4.7. rn1110 rn1111 101228.pdf Size:311K _toshiba

RN1111MFV
RN1111MFV

RN1110,RN1111 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1110, RN1111 Unit: mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • With built-in bias resistors • Simplified circuit design • Reduced number of parts and simplified manufacturing process • Complementary to RN2110 and RN2111 Equivalen

4.8. rn1110fs rn1111fs.pdf Size:130K _toshiba

RN1111MFV
RN1111MFV

RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm JEDEC ? • Incorporating a bias resistor into a transistor reduces parts count. JEITA ? Reducing the parts count enables the manufacture of ever more TOSHIBA 2-1E1

Datasheet: RN1110CT , RN1110FS , RN1110MFV , RN1110 , RN1111ACT , RN1111CT , RN1111FS , RN1111F , BD139 , RN1111 , RN1112ACT , RN1112CT , RN1112FS , RN1112MFV , RN1112 , RN1113ACT , RN1113CT .

 


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