RN1111 Specs and Replacement

Type Designator: RN1111

SMD Transistor Code: XM

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT416 SC75 SSM

 RN1111 Substitution

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RN1111 datasheet

 ..1. Size:106K  toshiba

rn1110 rn1111 sot416.pdf pdf_icon

RN1111

RN1110,RN1111 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110,RN1111 Unit mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110 RN2111 Equivalent Circuit Maximum Ratings (Ta = 25 C) JEDEC... See More ⇒

 ..2. Size:311K  toshiba

rn1110 rn1111.pdf pdf_icon

RN1111

RN1110,RN1111 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1110, RN1111 Unit mm Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2110 and RN2111 ... See More ⇒

 0.1. Size:237K  toshiba

rn1110act rn1111act.pdf pdf_icon

RN1111

RN1110ACT, RN1111ACT NPN (PCT ) ( ) RN1110ACT,RN1111ACT mm 0.6 0.05 0.5 0.03 (CST3) ... See More ⇒

 0.2. Size:321K  toshiba

rn1110mfv rn1111mfv.pdf pdf_icon

RN1111

RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1110MFV,RN1111MFV Unit mm 1.2 0.05 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.80 0.05 Ultra-small package, suited to very high density mounting 1 Incorporating a bias resistor into the transistor reduces the numb... See More ⇒

Detailed specifications: RN1110FS, RN1110MFV, RN1110, RN1111ACT, RN1111CT, RN1111FS, RN1111F, RN1111MFV, 2N5551, RN1112ACT, RN1112CT, RN1112FS, RN1112MFV, RN1112, RN1113ACT, RN1113CT, RN1113FS

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