RN1112 Specs and Replacement

Type Designator: RN1112

SMD Transistor Code: XN

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 22 kOhm

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT416 SC75 SSM

 RN1112 Substitution

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RN1112 datasheet

 ..1. Size:108K  toshiba

rn1112 rn1113.pdf pdf_icon

RN1112

RN1112,RN1113 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112,RN1113 Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2112, RN2113 Equivalent Circuit Maximum Ratings (Ta = 25 C) Char... See More ⇒

 ..2. Size:272K  toshiba

rn1112 rn1113 .pdf pdf_icon

RN1112

RN1112,RN1113 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112, RN1113 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduced number of parts and simplified process Complementary to RN2112 and RN2113 Equivalent Circuit Absolute Maximum Ratings (Ta = 25 ... See More ⇒

 0.1. Size:154K  toshiba

rn1112ct rn1113ct.pdf pdf_icon

RN1112

RN1112CT,RN1113CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1112CT,RN1113CT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 Interface Circuit Applications 0.5 0.03 Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count en... See More ⇒

 0.2. Size:286K  toshiba

rn1112mfv rn1113mfv.pdf pdf_icon

RN1112

RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1112MFV,RN1113MFV Unit mm Switching, Inverter Circuit, Interface Circuit and 1.2 0.05 Driver Circuit Applications 0.80 0.05 Ultra-small package, suited to very high density mounting 1 1 Incorporating a bias resistor into the transistor reduces the num... See More ⇒

Detailed specifications: RN1111FS, RN1111F, RN1111MFV, RN1111, RN1112ACT, RN1112CT, RN1112FS, RN1112MFV, BC548, RN1113ACT, RN1113CT, RN1113FS, RN1113MFV, RN1113, RN1114F, RN1114MFV, RN1114

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