RN1113ACT Specs and Replacement
Type Designator: RN1113ACT
SMD Transistor Code: CJ
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 47 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Collector Capacitance (Cc): 0.7 pF
Forward Current Transfer Ratio (hFE), MIN: 120
RN1113ACT Substitution
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RN1113ACT datasheet
RN1112ACT, RN1113ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1112ACT,RN1113ACT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 Interface Circuit Applications 0.5 0.03 Driver Circuit Applications Incorporating a bias resistor into a transistor reduces the number of parts, which enab... See More ⇒
RN1112CT,RN1113CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1112CT,RN1113CT Switching Applications Unit mm Inverter Circuit Applications 0.6 0.05 Interface Circuit Applications 0.5 0.03 Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count en... See More ⇒
RN1112,RN1113 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112,RN1113 Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2112, RN2113 Equivalent Circuit Maximum Ratings (Ta = 25 C) Char... See More ⇒
RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1112MFV,RN1113MFV Unit mm Switching, Inverter Circuit, Interface Circuit and 1.2 0.05 Driver Circuit Applications 0.80 0.05 Ultra-small package, suited to very high density mounting 1 1 Incorporating a bias resistor into the transistor reduces the num... See More ⇒
Detailed specifications: RN1111F, RN1111MFV, RN1111, RN1112ACT, RN1112CT, RN1112FS, RN1112MFV, RN1112, TIP41, RN1113CT, RN1113FS, RN1113MFV, RN1113, RN1114F, RN1114MFV, RN1114, RN1115F
Keywords - RN1113ACT pdf specs
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History: M54513FP | D44H11FP | DTA114TM3 | DTA114TET1G | 2N5412 | DDTC143ZCA
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