RN1114 Specs and Replacement

Type Designator: RN1114

SMD Transistor Code: XQ

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 1 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.1 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: SOT416 SC75 SSM

 RN1114 Substitution

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RN1114 datasheet

 ..1. Size:207K  toshiba

rn1114 rn1118.pdf pdf_icon

RN1114

RN1114 RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114, RN1115, RN1116, RN1117, RN1118 Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors. Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2114 to 2118 Equivalent Circuit a... See More ⇒

 0.1. Size:160K  toshiba

rn1114-rn1118.pdf pdf_icon

RN1114

RN1114 RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114,RN1115,RN1116,RN1117,RN1118 Switching, Inverter Circuit, Interface Circuit Unit mm And Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2114 2118 Equivalent Circuit and Bias Resistor ... See More ⇒

 0.2. Size:209K  toshiba

rn1114f rn1118f.pdf pdf_icon

RN1114

RN1114F RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2114F to 2118F Equivalent Circuit and Bi... See More ⇒

 0.3. Size:187K  toshiba

rn1114ft rn1118ft.pdf pdf_icon

RN1114

RN1114FT RN1118FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT Switching, Inverter Circuit, Interface Circuit Unit mm and Driver Circuit Applications Built-in bias resistors Enabling simplified circuit design Enabling reduction in the quantity of parts and manufacturing process Complementary to the RN2114F... See More ⇒

Detailed specifications: RN1112, RN1113ACT, RN1113CT, RN1113FS, RN1113MFV, RN1113, RN1114F, RN1114MFV, 13007, RN1115F, RN1115MFV, RN1115, RN1116FT, RN1116MFV, RN1116, RN1117FT, RN1117F

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