All Transistors. RN1117FT Datasheet

 

RN1117FT Datasheet, Equivalent, Cross Reference Search


   Type Designator: RN1117FT
   SMD Transistor Code: XU
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm

Typical Resistor Ratio R1/R2 = 2.1
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 15 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TESM

 RN1117FT Transistor Equivalent Substitute - Cross-Reference Search

   

RN1117FT Datasheet (PDF)

 8.1. Size:174K  toshiba
rn1114mfv rn1115mfv rn1116mfv rn1117mfv rn1118mfv.pdf

RN1117FT
RN1117FT

RN1114MFVRN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114MFV,RN1115MFV,RN1116MFV,RN1117MFV,RN1118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Unit: mmDriver Circuit Applications 1.2 0.05 With built-in bias resistors 0.80 0.05 Simplify circuit design Reduce a quantity of parts and manufac

 9.1. Size:237K  toshiba
rn1110act rn1111act.pdf

RN1117FT
RN1117FT

RN1110ACT, RN1111ACT NPN (PCT) () RN1110ACT,RN1111ACT : mm 0.60.05 0.50.03 (CST3)

 9.2. Size:106K  toshiba
rn1110 rn1111 sot416.pdf

RN1117FT
RN1117FT

RN1110,RN1111 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110,RN1111 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110~RN2111 Equivalent Circuit Maximum Ratings (Ta = 25C) JEDEC

 9.3. Size:207K  toshiba
rn1114 rn1118.pdf

RN1117FT
RN1117FT

RN1114~RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114, RN1115, RN1116, RN1117, RN1118 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors. Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2114 to 2118 Equivalent Circuit a

 9.4. Size:321K  toshiba
rn1110mfv rn1111mfv.pdf

RN1117FT
RN1117FT

RN1110MFV,RN1111MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1110MFV,RN1111MFV Unit: mm1.2 0.05Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 0.80 0.05 Ultra-small package, suited to very high density mounting 1 Incorporating a bias resistor into the transistor reduces the numb

 9.5. Size:281K  toshiba
rn1110f rn1111f.pdf

RN1117FT
RN1117FT

RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110F, RN2111F Equivalent Circuit Absolute Maximum Ratings (Ta

 9.6. Size:154K  toshiba
rn1112ct rn1113ct.pdf

RN1117FT
RN1117FT

RN1112CT,RN1113CT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1112CT,RN1113CT Switching Applications Unit: mmInverter Circuit Applications 0.60.05Interface Circuit Applications 0.50.03Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count en

 9.7. Size:130K  toshiba
rn1110fs rn1111fs.pdf

RN1117FT
RN1117FT

RN1110FS,RN1111FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1110FS, RN1111FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mmJEDEC Incorporating a bias resistor into a transistor reduces parts count. JEITA Reducing the parts count enables the manufacture of ever more TOSH

 9.8. Size:160K  toshiba
rn1114-rn1118.pdf

RN1117FT
RN1117FT

RN1114~RN1118 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114,RN1115,RN1116,RN1117,RN1118 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2114~2118 Equivalent Circuit and Bias Resistor

 9.9. Size:152K  toshiba
rn1119mfv.pdf

RN1117FT
RN1117FT

RN1119MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1119MFV Switching Applications Unit: mmInverter Circuit Applications 1.20.05Interface Circuit Applications 0.80.05Driver Circuit Applications 1 With built-in bias resistors 2 3 Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2119MFV

 9.10. Size:108K  toshiba
rn1112 rn1113.pdf

RN1117FT
RN1117FT

RN1112,RN1113 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112,RN1113 Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2112, RN2113 Equivalent Circuit Maximum Ratings (Ta = 25C) Char

 9.11. Size:121K  toshiba
rn1110ft rn1111ft .pdf

RN1117FT
RN1117FT

RN1110FT,RN1111FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1110FT,RN1111FT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.

 9.12. Size:209K  toshiba
rn1114f rn1118f.pdf

RN1117FT
RN1117FT

RN1114F~RN1118F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114F,RN1115F,RN1116F,RN1117F,RN1118F Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2114F to 2118F Equivalent Circuit and Bi

 9.13. Size:286K  toshiba
rn1112mfv rn1113mfv.pdf

RN1117FT
RN1117FT

RN1112MFV,RN1113MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1112MFV,RN1113MFV Unit: mmSwitching, Inverter Circuit, Interface Circuit and 1.2 0.05Driver Circuit Applications 0.80 0.05 Ultra-small package, suited to very high density mounting 11 Incorporating a bias resistor into the transistor reduces the num

 9.14. Size:187K  toshiba
rn1114ft rn1118ft.pdf

RN1117FT
RN1117FT

RN1114FT~RN1118FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114FT, RN1115FT, RN1116FT, RN1117FT, RN1118FT Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications Built-in bias resistors Enabling simplified circuit design Enabling reduction in the quantity of parts and manufacturing process Complementary to the RN2114F

 9.15. Size:105K  toshiba
rn1110f rn1111f sot490.pdf

RN1117FT
RN1117FT

RN1110F,RN1111F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1110F,RN1111F Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2110F, RN2111F Equivalent Circuit Maximum Ratings (Ta = 25C)

 9.16. Size:311K  toshiba
rn1110 rn1111.pdf

RN1117FT
RN1117FT

RN1110,RN1111 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1110, RN1111 Unit: mmSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduced number of parts and simplified manufacturing process Complementary to RN2110 and RN2111

 9.17. Size:272K  toshiba
rn1112 rn1113 .pdf

RN1117FT
RN1117FT

RN1112,RN1113 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112, RN1113 Switching, Inverter Circuit, Interface Circuit Unit: mmand Driver Circuit Applications With built-in bias resistors Simplified circuit design Reduced number of parts and simplified process Complementary to RN2112 and RN2113 Equivalent Circuit Absolute Maximum Ratings (Ta = 25

 9.18. Size:154K  toshiba
rn1112act rn1113act.pdf

RN1117FT
RN1117FT

RN1112ACT, RN1113ACT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1112ACT,RN1113ACT Switching Applications Unit: mmInverter Circuit Applications 0.60.05Interface Circuit Applications 0.50.03Driver Circuit Applications Incorporating a bias resistor into a transistor reduces the number of parts, which enab

 9.19. Size:106K  toshiba
rn1112f rn1113f.pdf

RN1117FT
RN1117FT

RN1112F,RN1113F TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1112F,RN1113F Switching, Inverter Circuit, Interface Circuit Unit: mmAnd Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2112F, RN2113F Equivalent Circuit Maximum Ratings (Ta = 25

 9.20. Size:130K  toshiba
rn1112fs rn1113fs.pdf

RN1117FT
RN1117FT

RN1112FS,RN1113FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor) RN1112FS, RN1113FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowe

 9.21. Size:154K  toshiba
rn1110ct rn1111ct.pdf

RN1117FT
RN1117FT

RN1110CT, RN1111CT TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1110CT,RN1111CT Switching Applications Unit: mmInverter Circuit Applications 0.60.05Interface Circuit Applications 0.50.03Driver Circuit Applications Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count e

 9.22. Size:124K  toshiba
rn1112ft rn1113ft.pdf

RN1117FT
RN1117FT

RN1112FT,RN1113FT TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1112FT,RN1113FT Switching, Inverter Circuit, Interface Circuit and Unit: mmDriver Circuit Applications High-density mount is possible because of devices housed in very thin TESM packages. Incorporating a bias resistor into a transistor reduces parts count.

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

 

 
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