2N5706 Specs and Replacement
Type Designator: 2N5706
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 80 W
Maximum Collector-Base Voltage |Vcb|: 36 V
Maximum Collector-Emitter Voltage |Vce|: 18 V
Maximum Emitter-Base Voltage |Veb|: 3 V
Maximum Collector Current |Ic max|: 7 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Collector Capacitance (Cc): 100 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Package: TO218
2N5706 Substitution
- BJT ⓘ Cross-Reference Search
2N5706 datasheet
NO PDF data!
Detailed specifications: 2N57, 2N570, 2N5700, 2N5701, 2N5702, 2N5703, 2N5704, 2N5705, TIP41, 2N5707, 2N5708, 2N5709, 2N571, 2N5710, 2N5711, 2N5712, 2N5713
Keywords - 2N5706 pdf specs
2N5706 cross reference
2N5706 equivalent finder
2N5706 pdf lookup
2N5706 substitution
2N5706 replacement
